Invention Grant
- Patent Title: Semiconductor structure for emitting light, and method for manufacturing such a structure
- Patent Title (中): 用于发光的半导体结构及其制造方法
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Application No.: US14122851Application Date: 2012-05-29
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Publication No.: US09130099B2Publication Date: 2015-09-08
- Inventor: Ivan-Christophe Robin
- Applicant: Ivan-Christophe Robin
- Applicant Address: FR Paris
- Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1154844 20110601
- International Application: PCT/EP2012/060011 WO 20120529
- International Announcement: WO2012/163899 WO 20121206
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/42 ; H01L33/38 ; H01L33/28 ; H01L33/32

Abstract:
A semiconductor structure for emitting light including a substrate made of a first semi-conductor material having a first type of conductivity, a first electrical contact, a second semiconductor material, having a second type of conductivity to form a junction, a second electrical contact contacting the second semiconductor material, a polarizer configured to polarize at least one portion of the semiconductor structure, and a plurality of micro- or nano-structures each including a first end connected to the substrate. Each micro- or nano-structure includes at least one portion made from the second semiconductor material, or each micro- or nano-structure having the first type of conductivity, a second end contacting the second semiconductor material to form the junction.
Public/Granted literature
- US20140097401A1 SEMICONDUCTOR STRUCTURE FOR EMITTING LIGHT, AND METHOD FOR MANUFACTURING SUCH A STRUCTURE Public/Granted day:2014-04-10
Information query
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