Invention Grant
US09130099B2 Semiconductor structure for emitting light, and method for manufacturing such a structure 有权
用于发光的半导体结构及其制造方法

Semiconductor structure for emitting light, and method for manufacturing such a structure
Abstract:
A semiconductor structure for emitting light including a substrate made of a first semi-conductor material having a first type of conductivity, a first electrical contact, a second semiconductor material, having a second type of conductivity to form a junction, a second electrical contact contacting the second semiconductor material, a polarizer configured to polarize at least one portion of the semiconductor structure, and a plurality of micro- or nano-structures each including a first end connected to the substrate. Each micro- or nano-structure includes at least one portion made from the second semiconductor material, or each micro- or nano-structure having the first type of conductivity, a second end contacting the second semiconductor material to form the junction.
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