Invention Grant
- Patent Title: Photoresistor
- Patent Title (中): 光敏电阻
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Application No.: US13858722Application Date: 2013-04-08
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Publication No.: US09130104B2Publication Date: 2015-09-08
- Inventor: Jun-Ku Liu , Guan-Hong Li , Qun-Qing Li , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Main IPC: H01L31/08
- IPC: H01L31/08 ; H01L31/09 ; H01L31/0224

Abstract:
A photoresistor includes a first electrode layer, a photosensitive material layer, and a second electrode layer. The first electrode layer, photosensitive material layer and second electrode layer are stacked with each other. The first electrode layer is located on a first surface of the photosensitive material layer. The second electrode layer is located on a second surface of the photosensitive material layer. The first surface and second surface of the photosensitive material layer are opposite to each other. The first electrode layer includes a carbon nanotube film structure.
Public/Granted literature
- US20140218161A1 PHOTORESISTOR Public/Granted day:2014-08-07
Information query
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