Invention Grant
- Patent Title: Method for manufacturing semiconductor light emitting apparatus by mounting semiconductor light emitting device having stacked dielectric films having different refractive indexes on mounting member
- Patent Title (中): 通过在安装构件上安装具有折射率不同的叠层电介质膜的半导体发光器件来制造半导体发光装置的方法
-
Application No.: US14506201Application Date: 2014-10-03
-
Publication No.: US09130106B2Publication Date: 2015-09-08
- Inventor: Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-220144 20080828
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/44 ; H01L33/10 ; H01L33/44 ; H01L33/62 ; H01L33/58 ; H01L33/48

Abstract:
A method for manufacturing a semiconductor light emitting apparatus having first semiconductor layer and second semiconductor layer sandwiching a light emitting layer, first and second electrodes provided on respective major surfaces of the first semiconductor and second semiconductor layers to connect thereto, stacked dielectric films having different refractive indexes provided on portions of the major surfaces not covered by the first and second electrodes, and a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method includes causing the semiconductor light emitting device and a mounting member to face each other, and causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.
Public/Granted literature
Information query
IPC分类: