Invention Grant
US09130120B2 Group III-V substrate material with thin buffer layer and methods of making
有权
具有薄缓冲层的III-V族基体材料和制备方法
- Patent Title: Group III-V substrate material with thin buffer layer and methods of making
- Patent Title (中): 具有薄缓冲层的III-V族基体材料和制备方法
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Application No.: US14142266Application Date: 2013-12-27
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Publication No.: US09130120B2Publication Date: 2015-09-08
- Inventor: Jean-Pierre Faurie , Bernard Beaumont
- Applicant: Saint-Gobain Cristaux Et Detecteurs
- Applicant Address: FR Courbevoie
- Assignee: Saint-Gobain Cristaux Et Detecteurs
- Current Assignee: Saint-Gobain Cristaux Et Detecteurs
- Current Assignee Address: FR Courbevoie
- Agency: Abel Law Group, LLP
- Agent Robert N. Young
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01S5/30 ; H01L21/02 ; H01L33/12 ; C30B25/18 ; C30B29/40 ; H01L33/00
Abstract:
A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm2 at a wavelength within a range of between about 400 nm to about 550 nm.
Public/Granted literature
- US20140185639A1 GROUP III-V SUBSTRATE MATERIAL WITH THIN BUFFER LAYER AND METHODS OF MAKING Public/Granted day:2014-07-03
Information query
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