Invention Grant
- Patent Title: Light-emitting diode element and light-emitting diode device
- Patent Title (中): 发光二极管元件和发光二极管器件
-
Application No.: US14146076Application Date: 2014-01-02
-
Publication No.: US09130141B2Publication Date: 2015-09-08
- Inventor: Junko Iwanaga , Akira Inoue , Toshiya Yokogawa , Shigeo Hayashi
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2012-203067 20120914
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L21/00 ; H01L33/64 ; H01L33/38 ; H01L33/62 ; H01L33/14

Abstract:
Disclosed is a light-emitting diode element including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, an active layer. A first electrode is provided on a surface of the second semiconductor layer. A second electrode is provided in a second region of the principal surface of the first semiconductor layer. A conductive layer is arranged such that the conductive layer covers a third region, a fourth region, and a fifth region in the rear surface of the first semiconductor layer. In the rear surface of the first semiconductor layer, the first semiconductor layer includes a sixth region which is not covered with the conductive layer and which overlaps another part of the first electrode. The first semiconductor layer is not provided with a through electrode.
Public/Granted literature
- US20140110747A1 LIGHT-EMITTING DIODE ELEMENT AND LIGHT-EMITTING DIODE DEVICE Public/Granted day:2014-04-24
Information query
IPC分类: