Embodiments of the present disclosure are a method of forming a semiconductor device, a method of forming an MRAM device, and a method of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method comprising forming a second layer over a first layer, and performing a first etch process on the second layer to define a feature, wherein the first etch process forms a film on a surface of the feature. The method further comprises performing an ion beam etch process on the feature, wherein the ion beam etch removes the film from the surface of the feature.