Invention Grant
- Patent Title: Method of fabricating element including nanogap electrodes
- Patent Title (中): 制造纳米胶片电极元件的方法
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Application No.: US12756522Application Date: 2010-04-08
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Publication No.: US09130159B2Publication Date: 2015-09-08
- Inventor: Shigeo Furuta , Touru Sumiya , Yuichiro Masuda , Tsuyoshi Takahashi , Yutaka Hayashi , Masatoshi Ono
- Applicant: Shigeo Furuta , Touru Sumiya , Yuichiro Masuda , Tsuyoshi Takahashi , Yutaka Hayashi , Masatoshi Ono
- Applicant Address: JP Daito-Shi
- Assignee: Funai Electric Co., Ltd.
- Current Assignee: Funai Electric Co., Ltd.
- Current Assignee Address: JP Daito-Shi
- Agency: Crowell & Moring LLP
- Priority: JP2009-095575 20090410
- Main IPC: H01H11/00
- IPC: H01H11/00 ; H01H65/00 ; H01L45/00

Abstract:
Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.
Public/Granted literature
- US20100257726A1 Method of Fabricating Element Including Nanogap Electrodes Public/Granted day:2010-10-14
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