Invention Grant
US09130166B2 Resistive non-volatile memory, cell structure and manufacturing method thereof
有权
电阻式非易失性存储器，电池结构及其制造方法
- Patent Title: Resistive non-volatile memory, cell structure and manufacturing method thereof
- Patent Title (中): 电阻式非易失性存储器，电池结构及其制造方法
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Application No.: US14315798Application Date: 2014-06-26
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Publication No.: US09130166B2Publication Date: 2015-09-08
- Inventor: Chrong-Jung Lin
- Applicant: Chrong-Jung Lin
- Applicant Address: TW Hsinchu
- Assignee: Chrong-Jung Lin
- Current Assignee: Chrong-Jung Lin
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Justin King
- Priority: TW103101392A 20140115
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; H01L23/532
Abstract:
A cell structure of a non-volatile memory includes a first metal layer, a first dielectric layer, a first transition layer, a second metal layer, a second dielectric layer, a second transition layer, and a third metal layer. The first dielectric layer is disposed over the first metal layer, and has a first via. The first transition layer is arranged between the first via and the first metal layer. The second metal layer is formed within the first via and contacted with the first transition layer. The second dielectric layer is disposed over the second metal layer and the first dielectric layer, and has a second via. The second transition layer is arranged between the second via and the second metal layer. The third metal layer is formed within the second via and contacted with the second transition layer.
Public/Granted literature
- US20150200232A1 RESISTIVE NON-VOLATILE MEMORY, CELL STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-07-16
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