A method of manufacturing a nonvolatile memory device includes: forming a first electrode; forming, above the first electrode, a metal oxide material layer including a first metal oxide; forming a mask above part of the metal oxide material layer main surface; forming, in a region of the metal oxide material layer not covered by the mask, a high oxygen concentration region including a second metal oxide having a lower degree of oxygen deficiency than the first metal oxide; removing the mask; forming, above a first variable resistance layer including the high oxygen concentration region and a low oxygen concentration region that is a region of the metal oxide material layer other than the high oxygen concentration region, a second variable resistance layer including a third metal oxide having a lower degree of oxygen deficiency than the first metal oxide; and forming a second electrode above the second variable resistance layer.