Invention Grant
US09130560B2 Edge rate control gate drive circuit and system for low side devices with driver FET
有权
边沿速率控制栅极驱动电路和具有驱动器FET的低端器件的系统
- Patent Title: Edge rate control gate drive circuit and system for low side devices with driver FET
- Patent Title (中): 边沿速率控制栅极驱动电路和具有驱动器FET的低端器件的系统
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Application No.: US13754468Application Date: 2013-01-30
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Publication No.: US09130560B2Publication Date: 2015-09-08
- Inventor: Adam L. Shook
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Alan A. R. Cooper; Frank D. Cimino
- Main IPC: H03K19/003
- IPC: H03K19/003 ; G05F3/16 ; H03K5/12
Abstract:
An apparatus, comprising a load; an output FET having a drain coupled to the load; a first and second of a pair strong FETs, wherein: a) a source of the first of the pair of the strong FETs is coupled to the load; b) a drain of the first pair of the strong FETs is coupled to the source of the second of the of the pair of the strong FETs; the drain of the second pair of the strong FETs is coupled to a gate of the output FET; and a fixed current mirror is coupled to the gate of the first of the pair of the strong FETs.
Public/Granted literature
- US20130234695A1 EDGE RATE CONTROL GATE DRIVE CIRCUIT AND SYSTEM FOR LOW SIDE DEVICES WITH DRIVER FET Public/Granted day:2013-09-12
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