Invention Grant
US09130592B2 Error correction code circuit and memory device including the same
有权
误差校正码电路和存储器件包括相同的
- Patent Title: Error correction code circuit and memory device including the same
- Patent Title (中): 误差校正码电路和存储器件包括相同的
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Application No.: US14054190Application Date: 2013-10-15
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Publication No.: US09130592B2Publication Date: 2015-09-08
- Inventor: Daisuke Fujiwara
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: JP2012-227834 20121015
- Main IPC: H03M13/15
- IPC: H03M13/15 ; H03M13/11 ; G06F11/10 ; G11C29/04 ; H03M13/00 ; H03M13/37 ; G06F11/08 ; H03M13/19

Abstract:
The ECC circuit includes a Chien search unit configured to determine whether there is an error in each bit of a data sequence. The Chien search unit selects a coefficient of a nonlinear term from among terms of an error locator polynomial as a nonlinear coefficient, separates the error locator polynomial into a first location equation including only linear terms and a second location equation including only nonlinear terms, determines a third location equation by dividing the first location equation by the nonlinear coefficient, determines a fourth location equation by dividing the second location equation by the nonlinear coefficient, and determines whether there is an error for each of the bits by performing an XOR operation on a result of the third location equation using the substitution value and a result of the fourth location equation using an arbitrary element of the error locator polynomial as a substitution value.
Public/Granted literature
- US20140108895A1 ERROR CORRECTION CODE CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2014-04-17
Information query
IPC分类: