Invention Grant
US09130597B2 Non-volatile memory error correction 有权
非易失性存储器错误校正

Non-volatile memory error correction
Abstract:
Improving the performance, life and amount of data storage in write limited non-volatile memory may be achieved by: a) utilizing a serial content-addressable memory (CAM) to perform logical address translation, b) a minimum CAM function to perform erase error count wear leveling, c) increasingly refining a two dimensional error-correction coding (ECC) method as needed to correct for degrading storage, and/or d) serially generating ECC and using an ECC serial decoder to correct the data.
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