Invention Grant
- Patent Title: Method of forming a semiconductor device and structure therefor
- Patent Title (中): 形成半导体器件的方法及其结构
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Application No.: US14263079Application Date: 2014-04-28
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Publication No.: US09131572B2Publication Date: 2015-09-08
- Inventor: Francois Laulanet , Wim Van de Maele
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: G05F1/00
- IPC: G05F1/00 ; H05B33/08

Abstract:
In one embodiment, a method of forming an LED control circuit may include configuring the LED control circuit to receive a sense signal that is representative of a value of an LED current flow through a plurality of LED strings wherein each LED string includes a plurality of series coupled LEDs; configuring a detector circuit of the LED control circuit to detect the LED current being no greater than a first value and responsively initiate forming a first time period; and configuring the LED control circuit to inhibit forming the LED current responsively to termination of the first time period.
Public/Granted literature
- US20140346956A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR Public/Granted day:2014-11-27
Information query
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