Invention Grant
- Patent Title: Buffer layer for sintering
- Patent Title (中): 缓冲层烧结
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Application No.: US14073986Application Date: 2013-11-07
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Publication No.: US09131610B2Publication Date: 2015-09-08
- Inventor: Zvi Yaniv , Mohshi Yang , Peter B. Laxton
- Applicant: APPLIED NANOTECH HOLDINGS, INC. , ISHIHARA CHEMICAL CO., LTD.
- Applicant Address: US FL Deerfield Beach JP Hyogo-Ku, Hyogo
- Assignee: PEN Inc.,Ishihara Chemical Co., Ltd.
- Current Assignee: PEN Inc.,Ishihara Chemical Co., Ltd.
- Current Assignee Address: US FL Deerfield Beach JP Hyogo-Ku, Hyogo
- Agency: Matheson Keys & Kordzik PLLC
- Agent Kelly Kordzik
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H05K1/09 ; B22F3/105 ; B22F7/04 ; B23K26/34 ; H01L21/268 ; H01L21/48 ; H05K3/46 ; H01L21/288 ; H01L23/532 ; H05K1/02 ; H05K3/10 ; B23K26/32 ; B23K35/02 ; H01L21/768 ; H05K3/12
Abstract:
A layer of material having a low thermal conductivity is coated over a substrate. A film of conductive ink is then coated over the layer of material having the low thermal conductivity, and then sintered. The film of conductive ink does not absorb as much energy from the sintering as the film of conductive ink coated over the layer of material having the low thermal conductivity. The layer of material having the low thermal conductivity may be a polymer, such as polyimide.
Public/Granted literature
- US20140057428A1 BUFFER LAYER FOR SINTERING Public/Granted day:2014-02-27
Information query
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