Invention Grant
- Patent Title: Wire and semiconductor device
- Patent Title (中): 线和半导体器件
-
Application No.: US13684297Application Date: 2012-11-23
-
Publication No.: US09131611B2Publication Date: 2015-09-08
- Inventor: Yuichi Yamazaki , Makoto Wada , Masayuki Kitamura , Tadashi Sakai
- Applicant: Yuichi Yamazaki , Makoto Wada , Masayuki Kitamura , Tadashi Sakai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-258098 20111125
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H05K1/09 ; H01L23/532 ; B82Y10/00 ; B82Y99/00 ; B82Y30/00
Abstract:
A wire of an embodiment includes: a substrate; a metal film provided on the substrate; a metal part provided on the metal film; and graphene wires formed on the metal part, wherein the graphene wire is electrically connected to the metal film, and the metal film and the metal part are formed using different metals or alloys from each other.
Public/Granted literature
- US20130134592A1 WIRE AND SEMICONDUCTOR DEVICE Public/Granted day:2013-05-30
Information query
IPC分类:
