Invention Grant
- Patent Title: Manufacturing method of substrate structure
- Patent Title (中): 衬底结构的制造方法
-
Application No.: US13794815Application Date: 2013-03-12
-
Publication No.: US09131635B2Publication Date: 2015-09-08
- Inventor: Tzu-Wei Huang
- Applicant: Tzu-Wei Huang
- Applicant Address: TW Hsinchu County
- Assignee: Subtron Technology Co., Ltd.
- Current Assignee: Subtron Technology Co., Ltd.
- Current Assignee Address: TW Hsinchu County
- Agency: Jianq Chyun IP Office
- Priority: TW101137153A 20121008
- Main IPC: H05K3/42
- IPC: H05K3/42 ; H05K3/00

Abstract:
A manufacturing method of substrate structure is provided. The base material having a core layer and a first and second copper foil layers located at a first and second surfaces of the core layer is provided. A surface treatment is performed on the first and second copper foil layers so as to form a first and second roughened surfaces. A laser beam is irradiated on the first roughened surface so as to form at least one first blind hole extending from the first copper foil layer to the second surface. An etching process is performed on the second copper foil layer so as to form at least one second blind hole extending from the second copper foil layer to the second surface. A conductive layer fills up a through hole defined by the first and second blind holes and covers the first and second copper foil layers.
Public/Granted literature
- US20140096382A1 MANUFACTURING METHOD OF SUBSTRATE STRUCTURE Public/Granted day:2014-04-10
Information query