Invention Grant
US09133021B2 Wafer level package having a pressure sensor and fabrication method thereof
有权
具有压力传感器的晶片级封装及其制造方法
- Patent Title: Wafer level package having a pressure sensor and fabrication method thereof
- Patent Title (中): 具有压力传感器的晶片级封装及其制造方法
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Application No.: US13090852Application Date: 2011-04-20
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Publication No.: US09133021B2Publication Date: 2015-09-15
- Inventor: Hong-Da Chang , Hsin-Yi Liao , Chun-An Huang , Shih-Kuang Chiu , Chien-An Chen
- Applicant: Hong-Da Chang , Hsin-Yi Liao , Chun-An Huang , Shih-Kuang Chiu , Chien-An Chen
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW99121403A 20100630
- Main IPC: H01L29/84
- IPC: H01L29/84 ; B81C1/00
Abstract:
A wafer level package having a pressure sensor and a fabrication method thereof are provided. A wafer having the pressure sensor is bonded to a lid, and electrical connecting pads are formed on the wafer. After the lid is cut, wire-bonding and packaging processes are performed. Ends of bonding wires are exposed and serve as an electrical connecting path. A bottom opening is formed on a bottom surface of the wafer, in order to form a pressure sensor path.
Public/Granted literature
- US20120001274A1 WAFER LEVEL PACKAGE HAVING A PRESSURE SENSOR AND FABRICATION METHOD THEREOF Public/Granted day:2012-01-05
Information query
IPC分类:
