Invention Grant
US09135966B2 Semiconductor device including memory capable of reducing power consumption
有权
包括能够降低功耗的存储器的半导体装置
- Patent Title: Semiconductor device including memory capable of reducing power consumption
- Patent Title (中): 包括能够降低功耗的存储器的半导体装置
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Application No.: US13566779Application Date: 2012-08-03
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Publication No.: US09135966B2Publication Date: 2015-09-15
- Inventor: Hisashi Iwamoto , Yuji Yano , Kazunari Inoue
- Applicant: Hisashi Iwamoto , Yuji Yano , Kazunari Inoue
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2011-174011 20110809
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/22 ; G11C7/10
Abstract:
A semiconductor device includes a plurality of memory arrays and a plurality of memory array control circuits. Each of the plurality of memory array control circuits includes a read/write control circuit for controlling a read/write operation for the memory array, and a selection circuit for selecting and activating the memory array based on a clock signal and an output signal from the read/write control circuit.
Public/Granted literature
- US20130039134A1 SEMICONDUCTOR DEVICE INCLUDING MEMORY CAPABLE OF REDUCING POWER CONSUMPTION Public/Granted day:2013-02-14
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