Invention Grant
- Patent Title: Semiconductor memory device and control method thereof
- Patent Title (中): 半导体存储器件及其控制方法
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Application No.: US14595861Application Date: 2015-01-13
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Publication No.: US09135983B2Publication Date: 2015-09-15
- Inventor: Shinya Fujioka
- Applicant: FUJITSU SEMICONDUCTOR LIMITED
- Applicant Address: JP Yokohama
- Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2014-026643 20140214
- Main IPC: G11C11/409
- IPC: G11C11/409 ; G11C11/22 ; G11C11/406

Abstract:
When a voltage monitoring circuit detects that a supplied voltage is in a state of being less than a certain voltage at a time of performing writing of data with respect to a memory cell of a memory core having a refresh function, a flag is set in a register circuit, an address at which the writing is performed is held, and the memory core is made to execute rewriting by a refresh operation with respect to the held address, in accordance with the flag set in the register circuit, thereby enabling an increase in speed of operation while securing a retention life of memory data, and enabling a reduction in power consumption without lowering a processing capability even if the supplied voltage is lowered.
Public/Granted literature
- US20150235690A1 SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF Public/Granted day:2015-08-20
Information query
IPC分类: