Invention Grant
US09136003B1 Mitigation of data retention drift by progrmming neighboring memory cells
有权
通过编制相邻存储单元来缓解数据保留漂移
- Patent Title: Mitigation of data retention drift by progrmming neighboring memory cells
- Patent Title (中): 通过编制相邻存储单元来缓解数据保留漂移
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Application No.: US14249403Application Date: 2014-04-10
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Publication No.: US09136003B1Publication Date: 2015-09-15
- Inventor: Avraham Poza Meir , Eyal Gurgi , Naftali Sommer , Yoav Kasorla
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/10 ; G11C16/04

Abstract:
A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.
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