Invention Grant
- Patent Title: Bevel etcher
- Patent Title (中): 斜角蚀刻机
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Application No.: US12164109Application Date: 2008-06-30
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Publication No.: US09136105B2Publication Date: 2015-09-15
- Inventor: Tai-Heng Yu , Chih-Yueh Li
- Applicant: Tai-Heng Yu , Chih-Yueh Li
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/308 ; H01L21/02 ; H01L21/67 ; H01L21/687
Abstract:
The wafer bevel etching apparatus of the present invention includes a wafer-protecting mask to cover parts of a wafer. A central region and a wafer bevel region surrounding the central region are defined on the wafer. The wafer-protecting mask includes a center sheltering region and at least one wafer bevel sheltering region. The center sheltering region can completely shelter the central region of the wafer, and the wafer bevel sheltering region extends from the outside edge of the center sheltering region, shelters parts of the wafer bevel region, and exposes the other parts of the wafer bevel region.
Public/Granted literature
- US20090325382A1 BEVEL ETCHER AND THE RELATED METHOD OF FLATTENING A WAFER Public/Granted day:2009-12-31
Information query
IPC分类:
