Invention Grant
US09136116B2 Method and system for formation of P-N junctions in gallium nitride based electronics
有权
在氮化镓基电子学中形成P-N结的方法和系统
- Patent Title: Method and system for formation of P-N junctions in gallium nitride based electronics
- Patent Title (中): 在氮化镓基电子学中形成P-N结的方法和系统
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Application No.: US13198666Application Date: 2011-08-04
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Publication No.: US09136116B2Publication Date: 2015-09-15
- Inventor: David P. Bour , Thomas R. Prunty , Linda Romano , Andrew P. Edwards , Isik C. Kizilyalli , Hui Nie , Richard J. Brown , Mahdan Raj
- Applicant: David P. Bour , Thomas R. Prunty , Linda Romano , Andrew P. Edwards , Isik C. Kizilyalli , Hui Nie , Richard J. Brown , Mahdan Raj
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; H01L29/66 ; H01L29/861 ; H01L29/808 ; H01L29/20
Abstract:
A semiconductor device includes a III-nitride substrate having a first conductivity type and a first electrode electrically coupled to the III-nitride substrate. The semiconductor device also includes a III-nitride material having a second conductivity type coupled to the III-nitride substrate at a regrowth interface and a p-n junction disposed between the III-nitride substrate and the regrowth interface.
Public/Granted literature
- US20130032814A1 METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS Public/Granted day:2013-02-07
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