Invention Grant
- Patent Title: Method for manufacturing semiconductor substrate
- Patent Title (中): 半导体衬底的制造方法
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Application No.: US13192498Application Date: 2011-07-28
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Publication No.: US09136141B2Publication Date: 2015-09-15
- Inventor: Junichi Koezuka
- Applicant: Junichi Koezuka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-176013 20100805
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/324 ; H01L21/84
Abstract:
A cap film which can prevent diffusion of hydrogen from the embrittled region and supply hydrogen to a region between the embrittled region and the surface of the semiconductor substrate is formed over the semiconductor substrate, and the semiconductor layer is transferred from the semiconductor substrate to the base substrate. In particular, the amount of hydrogen contained in the cap film formed over the semiconductor substrate is preferably greater than or equal to the irradiation amount of hydrogen ions.
Public/Granted literature
- US20120034758A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE Public/Granted day:2012-02-09
Information query
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