A substrate-less composite power semiconductor device may be fabricated from a vertical conductive power semiconductor device wafer that includes a top metal layer located on a top surface of the wafer by a) forming solder bumps on top of the top metal layer; b) forming wafer level molding around the solder bumps such that the solder bumps are exposed through a top of the wafer level molding; c) grinding a back side of the device wafer to reduce a total thickness of a semiconductor material portion of the device wafer to a final thickness; and d) forming a back metal on a back surface of the wafer.