Invention Grant
- Patent Title: Semiconductor device manufacturing method
- Patent Title (中): 半导体器件制造方法
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Application No.: US14703313Application Date: 2015-05-04
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Publication No.: US09136225B2Publication Date: 2015-09-15
- Inventor: Yoshihiro Kodaira
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agent Manabu Kanesaka
- Priority: JP2011-183836 20110825
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/31 ; H01L23/14 ; H01L23/29 ; H01L21/56 ; H01L29/66 ; H01L23/34 ; H01L23/10 ; H01L23/498 ; H01L23/053 ; H01L23/36

Abstract:
A method of manufacturing a semiconductor device, includes the steps of passing a control terminal through an opening of a resin case to partially expose the control terminal and covering a patterned insulating substrate with the resin case; inserting a resin block in the opening of the resin case; fitting a convex step portion formed on a side surface of the resin block into a valley formed between two projections of the control terminal; fitting a projection formed on the side surface of the resin block into a concave portion formed on a sidewall of the opening of the resin case; and fitting a projection formed on a bottom surface of the resin block into a concave portion formed in a beam portion at a bottom portion of the opening of the resin case to position and fix the control terminal.
Public/Granted literature
- US20150235965A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2015-08-20
Information query
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