Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14258131Application Date: 2014-04-22
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Publication No.: US09136287B2Publication Date: 2015-09-15
- Inventor: Hajime Kimura
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2011-171476 20110805
- Main IPC: H01L31/20
- IPC: H01L31/20 ; H01L31/036 ; H01L31/0376 ; H01L27/12 ; H05B33/08

Abstract:
Adverse effects of variation in threshold voltage are reduced. In a semiconductor device, electric charge is accumulated in a capacitor provided between a gate and a source of a transistor, and then, the electric charge accumulated in the capacitor is discharged; thus, the threshold voltage of the transistor is obtained. After that, current flows to a load. In the semiconductor device, the potential of one terminal of the capacitor is set higher than the potential of a source line, and the potential of the source line is set lower than the potential of a power supply line and the cathode side potential of the load.
Public/Granted literature
- US20140312347A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-10-23
Information query
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