Invention Grant
- Patent Title: Solid-state imaging device, semiconductor device, manufacturing methods thereof, and electronic apparatus
- Patent Title (中): 固态成像装置,半导体装置及其制造方法以及电子装置
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Application No.: US13276860Application Date: 2011-10-19
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Publication No.: US09136304B2Publication Date: 2015-09-15
- Inventor: Keiichi Maeda
- Applicant: Keiichi Maeda
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2010-241491 20101027
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/768 ; H01L23/48 ; H01L23/552 ; H01L25/065

Abstract:
A solid-state imaging device includes an imaging element and a logic element. The imaging element includes a first semiconductor substrate, a first wiring layer, and a first metal layer, in which a pixel region which is a light sensing surface is formed. The logic element includes a second semiconductor substrate, a second wiring layer, and a second metal layer, in which a signal processing circuit that processes a pixel signal obtained at the pixel region is formed. The logic element is laminated to the imaging element so that the first metal layer and the second metal layer are bonded to each other, and the first metal layer and the second metal layer are formed on a region excluding a region in which a penetrating electrode layer penetrating a bonding surface of the imaging element and the logic element is formed.
Public/Granted literature
Information query
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