Invention Grant
US09136307B2 Memory cells and memory cell formation methods using sealing material
有权
记忆细胞和记忆细胞的形成方法使用密封材料
- Patent Title: Memory cells and memory cell formation methods using sealing material
- Patent Title (中): 记忆细胞和记忆细胞的形成方法使用密封材料
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Application No.: US13369654Application Date: 2012-02-09
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Publication No.: US09136307B2Publication Date: 2015-09-15
- Inventor: Fabio Pellizzer
- Applicant: Fabio Pellizzer
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L47/00 ; H01L27/24 ; H01L45/00
Abstract:
Memory cells, arrays of memory cells, and methods of forming the same with sealing material on sidewalls thereof are disclosed herein. One example of forming a memory cell includes forming a stack of materials, forming a trench to a first depth in the stack of materials such that a portion of at least one of the active storage element material and the active select device material is exposed on sidewalls of the trench. A sealing material is formed on the exposed portion of the at least one of the active storage element material and the active select device material and the trench is deepened such that a portion of the other of the at least one of the active storage element material and the active select device material is exposed on the sidewalls of the trench.
Public/Granted literature
- US20130207068A1 MEMORY CELLS AND MEMORY CELL FORMATION METHODS USING SEALING MATERIAL Public/Granted day:2013-08-15
Information query
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