Invention Grant
US09136336B2 Inverter logic devices including graphene field effect transistor having tunable barrier
有权
逆变器逻辑器件包括具有可调屏障的石墨烯场效应晶体管
- Patent Title: Inverter logic devices including graphene field effect transistor having tunable barrier
- Patent Title (中): 逆变器逻辑器件包括具有可调屏障的石墨烯场效应晶体管
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Application No.: US13593708Application Date: 2012-08-24
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Publication No.: US09136336B2Publication Date: 2015-09-15
- Inventor: Jin-seong Heo , Seong-jun Park , Hyun-jong Chung , Hyun-jae Song , Hee-jun Yang , David Seo
- Applicant: Jin-seong Heo , Seong-jun Park , Hyun-jong Chung , Hyun-jae Song , Hee-jun Yang , David Seo
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2011-0085818 20110826
- Main IPC: H01L27/085
- IPC: H01L27/085 ; H01L29/16 ; H01L29/66 ; B82Y10/00 ; H01L29/786 ; H01L27/092 ; H01L21/8238
Abstract:
Inverter logic devices include a gate oxide on a back substrate, a first graphene layer and a second graphene layer separated from each other on the gate oxide, a first electrode layer and a first semiconductor layer separated from each other on the first graphene layer, a second electrode layer and a second semiconductor layer separated from each other on the second graphene layer, and an output electrode on the first and second semiconductor layers and configured to output an output signal. The first semiconductor layer is doped with a different type of impurities selected from n-type impurities and p-type impurities than the second semiconductor layer.
Public/Granted literature
- US20130048948A1 INVERTER LOGIC DEVICES INCLUDING GRAPHENE FIELD EFFECT TRANSISTOR HAVING TUNABLE BARRIER Public/Granted day:2013-02-28
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