Invention Grant
- Patent Title: Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistor
- Patent Title (中): 溅射靶，使用其形成非晶氧化物薄膜的方法以及薄膜晶体管的制造方法
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Application No.: US13870847Application Date: 2013-04-25
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Publication No.: US09136338B2Publication Date: 2015-09-15
- Inventor: Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue
- Applicant: IDEMITSU KOSAN CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-134731 20080522
- Main IPC: H01L29/24
- IPC: H01L29/24 ; B82Y30/00 ; C04B35/26 ; C04B35/44 ; C04B35/453 ; C04B35/645 ; C23C14/08 ; C23C14/34 ; H01L21/02 ; H01L29/786 ; H01L29/66
Abstract:
Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.
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