Invention Grant
US09136346B2 High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficiently
有权
能够更有效地吸收存储孔的高电子迁移率晶体管（HEMT）
- Patent Title: High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficiently
- Patent Title (中): 能够更有效地吸收存储孔的高电子迁移率晶体管（HEMT）
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Application No.: US14025961Application Date: 2013-09-13
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Publication No.: US09136346B2Publication Date: 2015-09-15
- Inventor: Yasuhiro Isobe , Mayumi Morizuka
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-240866 20121031
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L29/66 ; H01L29/778 ; H01L29/20
Abstract:
A semiconductor device that can more efficiently absorb a stored hole includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first electrode, a second electrode, a control electrode, and a third electrode. The second semiconductor layer is provided on the first semiconductor layer and has a band gap narrower than that of the first semiconductor layer. The second semiconductor layer includes a first portion and a second portion which is provided together with the first portion and contains an activated acceptor. The third semiconductor layer is provided on the first portion and has a band gap wider than or equal to the band gap of the second semiconductor layer. The first and the second electrodes are provided on the third semiconductor layer. The control electrode is provided between the first electrode and the second electrode. The third electrode is provided on the second portion.
Public/Granted literature
- US20140117375A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-05-01
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