Invention Grant
- Patent Title: Methods for manufacturing passivation layer and thin film transistor array substrate
- Patent Title (中): 制造钝化层和薄膜晶体管阵列基板的方法
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Application No.: US13219942Application Date: 2011-08-29
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Publication No.: US09136354B2Publication Date: 2015-09-15
- Inventor: Chengming He , Fengju Liu
- Applicant: Chengming He , Fengju Liu
- Applicant Address: CN Shenzhen
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen
- Agency: JMB Davis Ben-David
- Priority: CN201010557575 20101123
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/322 ; H01L29/66 ; H01L27/12
Abstract:
The present invention provides methods for manufacturing a passivation layer and a thin film transistor (TFT) array substrate. The method for manufacturing the passivation layer comprises the following steps: placing a substrate in a vacuum process chamber; providing an ammonia gas and a nitrogen gas into the vacuum process chamber; forming plasma and evaporating water vapor; and forming the passivation layer on the substrate. The method for manufacturing the passivation layer can be applicable to the method for manufacturing the TFT array substrate. The present invention can enhance the quality of the passivation layer.
Public/Granted literature
- US20120129303A1 METHODS FOR MANUFACTURING PASSIVATION LAYER AND THIN FILM TRANSISTOR ARRAY SUBSTRATE Public/Granted day:2012-05-24
Information query
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