Invention Grant
US09136386B2 SOI substrate, method of manufacturing the SOI substrate, semiconductor device, and method of manufacturing the semiconductor device
有权
SOI衬底，SOI衬底的制造方法，半导体器件以及半导体器件的制造方法
- Patent Title: SOI substrate, method of manufacturing the SOI substrate, semiconductor device, and method of manufacturing the semiconductor device
- Patent Title (中): SOI衬底，SOI衬底的制造方法，半导体器件以及半导体器件的制造方法
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Application No.: US13362093Application Date: 2012-01-31
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Publication No.: US09136386B2Publication Date: 2015-09-15
- Inventor: Masao Okihara
- Applicant: Masao Okihara
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Volentine & Whitt, PLLC
- Priority: JP2011-020521 20110202
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L21/762 ; H01L29/66 ; H01L29/78
Abstract:
An SOI substrate includes a semiconductor base; a semiconductor layer formed over the semiconductor base; and a buried insulating film which is disposed between the semiconductor base and the semiconductor layer, so as to electrically isolate the semiconductor layer from the semiconductor base, where the buried insulating film contains a nitride film.
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