Invention Grant
- Patent Title: Semiconductor light emitting element and light emitting device
- Patent Title (中): 半导体发光元件及发光元件
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Application No.: US14337899Application Date: 2014-07-22
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Publication No.: US09136425B2Publication Date: 2015-09-15
- Inventor: Jumpei Tajima , Shigeya Kimura , Hiroshi Ono , Naoharu Sugiyama , Shinya Nunoue
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-157359 20130730
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/32 ; H01L33/40 ; H01L33/06 ; H01L33/64

Abstract:
A semiconductor light emitting element includes a first substrate, a stacked body, an electrode, and a conductive layer. The first substrate has a first face and a first side face. The first side face intersects the first face. The first substrate includes a plurality of conductive portions and a plurality of insulating portions arranged alternately. The stacked body is aligned with the first substrate. The stacked body includes first and second semiconductor layers and a light emitting layer. The electrode is electrically connected to the first semiconductor layer. The conductive layer is electrically connected to at least one of the conductive portions and the second semiconductor layer. At least one of the insulating portions is disposed between the first side face and a portion of the conductive layer nearest to the first side face.
Public/Granted literature
- US20150034997A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE Public/Granted day:2015-02-05
Information query
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