Invention Grant
- Patent Title: Multilayer construction
- Patent Title (中): 多层建筑
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Application No.: US14467497Application Date: 2014-08-25
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Publication No.: US09136429B2Publication Date: 2015-09-15
- Inventor: Jun-Ying Zhang , Michael A. Haase , Todd A. Ballen , Terry L. Smith
- Applicant: 3M INNOVATIVE PROPERTIES COMPANY
- Applicant Address: US MN St. Paul
- Assignee: 3M INNOVATIVE PROPERTIES COMPANY
- Current Assignee: 3M INNOVATIVE PROPERTIES COMPANY
- Current Assignee Address: US MN St. Paul
- Agent Yufeng Dong
- Main IPC: H01L33/06
- IPC: H01L33/06 ; B82Y20/00 ; C23C14/02 ; C23C14/06 ; C23C16/02 ; C23C16/34 ; H01L21/46 ; H01L33/28 ; H01L33/46 ; H01L21/306 ; H01S5/183 ; H01S5/347 ; G02B6/44
Abstract:
Multilayer construction is disclosed. The multilayer construction includes a II-VI semiconductor layer and a Si3N4 layer disposed directly on the II-VI semiconductor layer.
Public/Granted literature
- US20140367641A1 MULTILAYER CONSTRUCTION Public/Granted day:2014-12-18
Information query
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