Invention Grant
US09136430B2 Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
有权
半导体缓冲结构，包括该半导体缓冲结构的半导体器件以及使用半导体缓冲结构的半导体器件的制造方法
- Patent Title: Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
- Patent Title (中): 半导体缓冲结构，包括该半导体缓冲结构的半导体器件以及使用半导体缓冲结构的半导体器件的制造方法
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Application No.: US13963476Application Date: 2013-08-09
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Publication No.: US09136430B2Publication Date: 2015-09-15
- Inventor: Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Jae-won Lee , Hyo-ji Choi
- Applicant: Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Jae-won Lee , Hyo-ji Choi
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0087350 20120809; KR10-2013-0088249 20130725
- Main IPC: H01L33/12
- IPC: H01L33/12 ; H01L21/02 ; H01L33/00
Abstract:
A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and has a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer is formed on the first layer, includes AlxInyGa1-x-yN (0≦x
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