Invention Grant
- Patent Title: Method of forming a magnetic tunnel junction structure
- Patent Title (中): 形成磁隧道结结构的方法
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Application No.: US11943042Application Date: 2007-11-20
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Publication No.: US09136463B2Publication Date: 2015-09-15
- Inventor: Xia Li , Seung H. Kang , Xiaochun Zhu
- Applicant: Xia Li , Seung H. Kang , Xiaochun Zhu
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Donald D. Min
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12
Abstract:
In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction (MTJ) structure including a conductive layer on a substrate. The method also includes depositing a sacrificial layer on the conductive layer before depositing a patterning film layer.
Public/Granted literature
- US20090130779A1 Method of Forming a Magnetic Tunnel Junction Structure Public/Granted day:2009-05-21
Information query
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