Invention Grant
- Patent Title: Composition for organic semiconductor insulating films, and organic semiconductor insulating film
- Patent Title (中): 有机半导体绝缘膜和有机半导体绝缘膜的组成
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Application No.: US14352469Application Date: 2012-11-13
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Publication No.: US09136486B2Publication Date: 2015-09-15
- Inventor: Hiroshi Suzuki , Akinori Kitamura , Takashi Hamada
- Applicant: TOAGOSEI CO., LTD.
- Applicant Address: JP Minato-ku
- Assignee: TOAGOSEI CO., LTD.
- Current Assignee: TOAGOSEI CO., LTD.
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-284363 20111226
- International Application: PCT/JP2012/079426 WO 20121113
- International Announcement: WO2013/009460 WO 20130704
- Main IPC: H01L51/00
- IPC: H01L51/00 ; C08G77/04 ; H01L51/05 ; C08G77/14

Abstract:
The purpose of the invention is to provide: a composition for an organic semiconductor insulating film, which is capable of forming an insulating film that exhibits excellent hydrophobicity and smoothness of the surface, while having excellent electrical stability; and an organic semiconductor insulating film obtained by using the composition for an organic semiconductor insulating film. The present composition contains a polysiloxane and an organic polymer compound. The polysiloxane is a polyhedral silsesquioxane having an oxetanyl group and/or an oxetanyl group containing silicon compound represented by the following formula (1). In the formula (1), each of R1-R3 independently represents a monovalent organic group (provided that at least one of R1-R3 is a monovalent organic group having an oxetanyl group); and each of v, w, x and y independently represents 0 or a positive number (provided that w and at least one of v, x and y are positive numbers).
Public/Granted literature
- US20140326980A1 COMPOSITION FOR ORGANIC SEMICONDUCTOR INSULATING FILMS, AND ORGANIC SEMICONDUCTOR INSULATING FILM Public/Granted day:2014-11-06
Information query
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