A backside illumination image sensor is provided. The backside illumination image sensor includes a plurality of different types of pixels, each pixel including a photodiode configured to accumulate photogenerated charges corresponding to light incident on a backside of a semiconductor substrate and a transfer transistor configured to transfer the photogenerated charges to a floating diffusion node; and a plurality of transfer lines disposed at a front side of the semiconductor substrate, the plurality of transfer lines connected to a gate of the transfer transistor of a respective one of the pixels, wherein transfer control signals respectively transmitted through the transfer lines produce different effective integration times in the pixels.