Invention Grant
- Patent Title: CMP pad cleaning apparatus
- Patent Title (中): CMP垫清洁装置
-
Application No.: US13396854Application Date: 2012-02-15
-
Publication No.: US09138861B2Publication Date: 2015-09-22
- Inventor: Jiann Lih Wu , Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
- Applicant: Jiann Lih Wu , Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: B24B53/00
- IPC: B24B53/00 ; B24B53/017

Abstract:
The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.
Public/Granted literature
- US20130210323A1 CMP Pad Cleaning Apparatus Public/Granted day:2013-08-15
Information query