Invention Grant
US09141552B2 Memory using voltage to improve reliability for certain data types
有权
内存使用电压来提高某些数据类型的可靠性
- Patent Title: Memory using voltage to improve reliability for certain data types
- Patent Title (中): 内存使用电压来提高某些数据类型的可靠性
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Application No.: US13736322Application Date: 2013-01-08
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Publication No.: US09141552B2Publication Date: 2015-09-22
- Inventor: Andrew C. Russell , Ravindraraj Ramaraju
- Applicant: Andrew C. Russell , Ravindraraj Ramaraju
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Terrile, Cannatti, Chambers & Holland, LLP
- Agent Stephen A. Terrile
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/08 ; G11C11/412
Abstract:
A method for minimizing soft error rates within caches by configuring a cache with a certain way which is more resistant to soft errors and then using this way to store modified data. In certain embodiments, the memory is made more soft error resistant by increasing a voltage across bitcells of the cache.
Public/Granted literature
- US20140195733A1 Memory Using Voltage to Improve Reliability for Certain Data Types Public/Granted day:2014-07-10
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