According to one embodiment, a semiconductor memory device includes a memory cell array including memory cells, word lines connected to the memory cell array to select rows of the memory cell array, first bit lines connected to the memory cell array to select columns of the memory cell array, a replica cell array including replica cells respectively connected to the word lines, and storing information on characteristics of the rows of the memory cell array, and a second bit line connected to the replica cells. An operation is changed for each row of the memory cell array based on the information in the replica cells.