Invention Grant
- Patent Title: III-N material grown on ErAlN buffer on Si substrate
- Patent Title (中): 在Si衬底上在ErAlN缓冲液上生长的III-N材料
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Application No.: US14269011Application Date: 2014-05-02
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Publication No.: US09142406B1Publication Date: 2015-09-22
- Inventor: Rytis Dargis , Andrew Clark , Nam Pham , Erdem Arkun
- Applicant: Rytis Dargis , Andrew Clark , Nam Pham , Erdem Arkun
- Applicant Address: US CA Palo Alto
- Assignee: Translucent, Inc.
- Current Assignee: Translucent, Inc.
- Current Assignee Address: US CA Palo Alto
- Agency: Parsons & Goltry
- Agent Robert A. Parsons; Michael W. Goltry
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; H01L29/20 ; H01L29/205
Abstract:
III-N material grown on a buffer on a substrate that includes one of a single crystal silicon or a single crystal sapphire. A buffer of single crystal alloy, including one of ErxAl1-xN or (RE1yRE21-y)xAl1-xN, is positioned on the substrate. A layer of single crystal III-N material is positioned on the surface of the buffer and the single crystal alloy has a lattice constant substantially crystal lattice matched to the layer of single crystal III-N material. When the III-N material is GaN, the x in the formula for the alloy varies from less than 1 adjacent the substrate to greater than or equal to 0.249 adjacent the layer of single crystal GaN.
Information query
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