Invention Grant
- Patent Title: Substrate stage of substrate processing apparatus and substrate processing apparatus
- Patent Title (中): 基板处理装置和基板处理装置的基板台
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Application No.: US12410261Application Date: 2009-03-24
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Publication No.: US09142435B2Publication Date: 2015-09-22
- Inventor: Mitsunori Ishisaka
- Applicant: Mitsunori Ishisaka
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Brundidge & Stanger, P.C.
- Priority: JP2008-080114 20080326; JP2008-312266 20081208
- Main IPC: C23C16/46
- IPC: C23C16/46 ; H01L21/67

Abstract:
Provided is a substrate processing apparatus including a partitioned susceptor and configured to heat a substrate uniformly for improving process quality and yield. The substrate stage comprises a plurality of susceptor segments embedded with heating units, a substrate stage unit comprising the plurality of susceptor segments arranged in a flat configuration to define a substrate placement surface, and a uniform heating part mounted at the substrate placement surface.
Public/Granted literature
- US20090241836A1 SUBSTRATE STAGE OF SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2009-10-01
Information query
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