Invention Grant
- Patent Title: Hard mask removal scheme
- Patent Title (中): 硬面膜去除方案
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Application No.: US13947746Application Date: 2013-07-22
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Publication No.: US09142452B2Publication Date: 2015-09-22
- Inventor: Jeng-Shiou Chen , Chia-Chun Kao , Ming-Hsi Yeh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L21/308
Abstract:
A method includes forming a barrier layer in a via hole and over a hard mask layer. The hard mask layer is disposed over a dielectric layer. The via hole is located through the dielectric layer and the hard mask layer. A filler layer is formed in the via hole and over the barrier layer. The filler layer and the hard mask layer are removed. A metal layer is formed in the via hole.
Public/Granted literature
- US20150024588A1 Hard Mask Removal Scheme Public/Granted day:2015-01-22
Information query
IPC分类:
