Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US14215149Application Date: 2014-03-17
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Publication No.: US09142454B1Publication Date: 2015-09-22
- Inventor: Guan-Ru Lee , Yu-Wei Jiang
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L23/48

Abstract:
A semiconductor structure and a method for manufacturing the same are disclosed. The semiconductor structure includes a substrate, a first conductive structure, a second conductive structure, a dielectric structure, a dielectric layer, a first conductive plug, and a second conductive plug. The first conductive plug passes through only an upper dielectric portion of the dielectric structure, the dielectric layer and a lower dielectric portion of the dielectric structure to physically and electrically contact with the first conductive structure. The second conductive plug passes through the upper dielectric portion, the dielectric layer and the lower dielectric portion to physically and electrically contact with the second conductive structure.
Public/Granted literature
- US20150262871A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-09-17
Information query
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