Invention Grant
- Patent Title: Microelectronic package with high temperature thermal interface material
- Patent Title (中): 微电子封装具有高温热界面材料
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Application No.: US12192679Application Date: 2008-08-15
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Publication No.: US09142480B2Publication Date: 2015-09-22
- Inventor: Sabina Houle , Daewoong Suh , Charles Hill
- Applicant: Sabina Houle , Daewoong Suh , Charles Hill
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L23/42
- IPC: H01L23/42 ; H01L23/24 ; H05K7/20

Abstract:
A microelectronic package is provided. The microelectronic package includes a substrate, a die coupled to a top surface of the substrate and a integrated heat spreader thermally coupled to the die, wherein the integrated heat spreader comprises integrated heat spreader walls. The microelectronic package also includes a thermal interface material disposed between the die and the integrated heat spreader and an underfill material disposed between the integrated heat spreader and the substrate, wherein the underfill material is disposed within gaps between the integrated heat spreader walls, the die and the thermal interface material.
Public/Granted literature
- US20100039777A1 MICROELECTRONIC PACKAGE WITH HIGH TEMPERATURE THERMAL INTERFACE MATERIAL Public/Granted day:2010-02-18
Information query
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