Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US14574330Application Date: 2014-12-17
-
Publication No.: US09142539B2Publication Date: 2015-09-22
- Inventor: Tomoaki Ikegami , Kazuyuki Nakanishi , Masaki Tamaru
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Kanagawa
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-114517 20100518
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L27/02 ; H01L27/118 ; H01L27/06

Abstract:
A standard cell has gate patterns extending in Y direction and arranged at an equal pitch in X direction. End portions of the gate patterns are located at the same position in Y direction, and have an equal width in X direction. A diode cell is located next to the standard cell in Y direction, and includes a plurality of opposite end portions formed of gate patterns that are opposed to the end portions, in addition to a diffusion layer which functions as a diode.
Public/Granted literature
- US20150137248A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-05-21
Information query
IPC分类: