Invention Grant
- Patent Title: Field plate assisted resistance reduction in a semiconductor device
- Patent Title (中): 半导体器件中的场板辅助电阻降低
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Application No.: US13651096Application Date: 2012-10-12
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Publication No.: US09142625B2Publication Date: 2015-09-22
- Inventor: Anco Heringa , Gerhard Koops , Boni Kofi Boksteen , Alessandro Ferrara
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/40 ; H01L29/78 ; H01L29/786

Abstract:
Embodiments of a semiconductor device, a circuit including a semiconductor device and a driver circuit, and a method for operating a semiconductor device are described. In one embodiment, a semiconductor device includes a substrate, a source region, a drain region, and a drain extension region formed in the substrate, and an insulation layer adjacent to the drain extension region. A gate layer and a field plate are formed one of within and on the insulation layer. The field plate is located adjacent to the drain extension region and is electrically insulated from the gate layer and the source region such that a voltage can be applied to the field plate independent from voltages applied to the gate layer and the source region. Other embodiments are also described.
Public/Granted literature
- US20140103968A1 FIELD PLATE ASSISTED RESISTANCE REDUCTION IN A SEMICONDUCTOR DEVICE Public/Granted day:2014-04-17
Information query
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