A non-planar transistor is fabricated with dummy or sacrificial epitaxy and a structure for subsequent replacement or final epitaxy containment is created around the sacrificial epitaxy. The dummy epitaxy is then removed and replaced with the replacement epitaxy. The containment structure allows for uniform growth of the replacement epitaxy and prevents merger. Where n-type and p-type structures are present, the replacement epitaxy process is performed for each type, while protecting the other type with a mask. Optionally, one of the replacement epitaxies, i.e., the one for n-type or p-type, may be used as the dummy epitaxy, resulting in the need for only one mask.